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cc1125 swrs120e ? june 2011 ? revised october 2014 cc1125 ultra-high performance rf narrowband transceiver 1 device overview 1.1 features 1 ? high-performance, single-chip transceiver ? programmable output power up to +16 dbm with 0.4-db step size ? adjacent channel selectivity: 67 db at 6.25-khz offset ? automatic output power ramping ? blocking performance: 104 db at 10 mhz ? configurable data rates: 0 to 200 kbps ? excellent receiver sensitivity ? supported modulation formats: 2-fsk, 2-gfsk, 4-fsk, 4-gfsk, msk, ook ? ? 129 dbm at 300 bps ? wavematch: advanced digital signal processing ? ? 123 dbm at 1.2 kbps for improved sync detect performance ? ? 110 dbm at 50 kbps ? rohs-compliant 5-mm x 5-mm no-lead qfn ? very low phase noise: ? 115 dbc/hz at 32-pin package (rhb) 10-khz offset ? regulations ? suitable for systems targeting ? suitable for systems targeting etsi compliance with category 1 ? europe : etsi en 300 220 category 1, etsi en ? separate 128-byte rx and tx fifos 54-25, etsi en 300 113, and en 301 166 ? support for seamless integration with the cc1190 ? us : fcc cfr47 part 15, 24, 90, 101 device for increased range giving up to 3-db ? japan : arib rcr std-t30, t-67, t-108 improvement in sensitivity and up to +27-dbm ? peripherals and support functions output power ? ewor functionality for automatic low-power ? high spectral efficiency (9.6 kbps in 12.5-khz receive polling channel in compliance with fcc narrowbanding mandate) ? includes functions for antenna diversity support ? power supply ? support for retransmissions ? wide supply voltage range (2.0 v to 3.6 v) ? support for auto-acknowledge of received ? low current consumption: packets ? rx: 2 ma in rx sniff mode ? tcxo support and control, also in power ? rx: 17 ma peak current in low-power modes mode ? automatic clear channel assessment (cca) for ? rx: 26 ma peak current in high- listen-before-talk (lbt) systems performance mode ? built-in coding gain support for increased ? tx: 47 ma at +14 dbm range and robustness ? power down: 0.12 a (0.5 a with enhanced ? digital rssi measurement wake-on-radio (ewor) timer running) ? temperature sensor 1.2 applications ? social alarms ? ieee 802.15.4g systems ? narrowband ultra-low-power wireless systems ? home and building automation with channel spacing down to 4 khz ? wireless alarm and security systems ? 169-, 315-, 433-, 868-, 915-, 920-, 950-mhz ? industrial monitoring and control ism/srd band systems ? wireless healthcare applications ? wireless metering and wireless smart grid (amr ? wireless sensor networks and active rfid and ami) ? private mobile radios 1 an important notice at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. production data. productfolder sample &buy technical documents tools & software support &community
cc1125 swrs120e ? june 2011 ? revised october 2014 www.ti.com 1.3 description the cc1125 device is a fully integrated single-chip radio transceiver designed for high performance at very low-power and low-voltage operation in cost-effective wireless systems. all filters are integrated, thus removing the need for costly external saw and if filters. the device is mainly intended for the ism (industrial, scientific and medical) and srd (short range device) frequency bands at 164 ? 192 mhz, 274 ? 320 mhz, 410 ? 480 mhz, and 820 ? 960 mhz. the cc1125 device provides extensive hardware support for packet handling, data buffering, burst transmissions, clear channel assessment, link quality indication, and wake-on-radio. the main operating parameters of the cc1125 device can be controlled through an spi interface. in a typical system, the cc1125 device will be used with a microcontroller and only a few external passive components. device information (1) part number package body size cc1125rhb vqfn (32) 5.00 mm x 5.00 mm (1) for more information, see section 8 , mechanical packaging and orderable information 1.4 functional block diagram figure 1-1 shows the system block diagram of the cc1125 device. figure 1-1. functional block diagram 2 device overview copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: cc1125 cc112x marc main radio control unit ultra low power 16 bit mcu 256 byte fifo ram buffer 4k byte rom rf and dsp frontend packet handler and fifo control configuration and status registers ewor enhanced ultra low power wake on radio timer spi serial configuration and data interface interrupt and io handler system bus pa lna_p lna_n 90db dynamic range adc 90db dynamic range adc high linearity lna 14dbm high efficiency pa channel filter xosc cordic agc automatic gain control, 60db vga range rssi measurements and carrier sense detection highly flexible fsk / ook demodulator (optional bit clock) (optional low jitter serial data output for legacy protocols) data interface with signal chain access xosc_q1 xosc_q2 ultra low power 32khz auto-calibrated rc oscillator (optional 32khz clock intput) csn (chip select) si (serial input) so (serial output) sclk (serial clock) (optional gpio0-3) modulator fully integrated fractional-n frequency synthesizer output power ramping and ook / ask modulation ifamp ifamp (optional autodetected external xosc / tcxo) (optional gpio for antenna diversity) i q battery sensor / temp sensor power on reset
cc1125 www.ti.com swrs120e ? june 2011 ? revised october 2014 table of contents 1 device overview ......................................... 1 4.15 high-speed clock input (tcxo) .................... 19 1.1 features .............................................. 1 4.16 32-khz clock input .................................. 19 1.2 applications ........................................... 1 4.17 low speed rc oscillator ........................... 20 1.3 description ............................................ 2 4.18 i/o and reset ....................................... 20 1.4 functional block diagram ............................ 2 4.19 temperature sensor ............................... 20 2 revision history ......................................... 4 4.20 typical characteristics .............................. 21 3 terminal configuration and functions .............. 5 5 detailed description ................................... 24 3.1 pin diagram .......................................... 5 5.1 block diagram ....................................... 24 3.2 pin configuration ..................................... 6 5.2 frequency synthesizer .............................. 24 4 specifications ............................................ 7 5.3 receiver ............................................. 25 4.1 absolute maximum ratings .......................... 7 5.4 transmitter .......................................... 25 4.2 handling ratings ..................................... 7 5.5 radio control and user interface ................... 25 4.3 recommended operating conditions (general 5.6 4.5 enhanced wake-on-radio (ewor) ............ 25 characteristics) ....................................... 7 5.7 sniff mode ........................................... 26 4.4 thermal resistance characteristics for rhb 5.8 antenna diversity ................................... 26 package .............................................. 7 5.9 wavematch .......................................... 27 4.5 rf characteristics .................................... 8 6 typical application circuit ........................... 28 4.6 regulatory standards ................................ 8 7 device and documentation support ............... 29 4.7 current consumption, static modes ................. 9 7.1 device support ...................................... 29 4.8 current consumption, transmit modes .............. 9 7.2 documentation support ............................. 30 4.9 current consumption, receive modes .............. 10 7.3 community resources .............................. 30 4.10 receive parameters ................................. 11 7.4 trademarks .......................................... 30 4.11 transmit parameters ................................ 17 7.5 electrostatic discharge caution ..................... 30 4.12 pll parameters ..................................... 18 7.6 glossary ............................................. 30 4.13 wake-up and timing ................................ 19 8 mechanical packaging and orderable 4.14 high-speed crystal oscillator ....................... 19 information .............................................. 31 copyright ? 2011 ? 2014, texas instruments incorporated table of contents 3 submit documentation feedback product folder links: cc1125
cc1125 swrs120e ? june 2011 ? revised october 2014 www.ti.com 2 revision history note: page numbers for previous revisions may differ from page numbers in the current version. this data manual revision history highlights the changes made to the swrs120d device-specific data manual to make it an swrs120e revision. changes from revision d (june 2014) to revision e page ? added ambient to the temperature range condition and removed tj from temperature range ........................... 7 ? added data to tcxo table ......................................................................................................... 19 4 revision history copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: cc1125
cc1125 www.ti.com swrs120e ? june 2011 ? revised october 2014 3 terminal configuration and functions 3.1 pin diagram figure 3-1 shows pin names and locations for the cc1125 device. figure 3-1. package 5-mm 5-mm qfn copyright ? 2011 ? 2014, texas instruments incorporated terminal configuration and functions 5 submit documentation feedback product folder links: cc1125 csn so (gpio1) dvdd avdd_if rbias avdd_rf gpio0 reset_n gpio3gpio2 dvdd vdd_guard cc1125 5 4 3 2 1 lna_p lna_n dcpl_vco avdd_synth1 trx_sw 19 20 21 22 23 avdd_pfd_chp xosc_q2xosc_q1 dcpl_pfd_chp 27 28 29 30 31 dcpl 6 7 pa 18 17 26 25 15 9 10 11 12 13 14 si n.c. dcpl_xosc avdd_xosc 8 sclk 16 24 ext_xosc 32 lpf0 lpf1 avdd_synth2 gnd ground pad
cc1125 swrs120e ? june 2011 ? revised october 2014 www.ti.com 3.2 pin configuration the following table lists the pin-out configuration for the cc1125 device. pin no. pin name type / description direction 1 vdd_guard power 2.0 ? 3.6 v vdd 2 reset_n digital input asynchronous, active-low digital reset 3 gpio3 digital i/o general-purpose i/o 4 gpio2 digital i/o general-purpose i/o 5 dvdd power 2.0 ? 3.6 vdd to internal digital regulator 6 dcpl power digital regulator output to external decoupling capacitor 7 si digital input serial data in 8 sclk digital input serial data clock 9 so(gpio1) digital i/o serial data out (general-purpose i/o) 10 gpio0 digital i/o general-purpose i/o 11 csn digital input active-low chip select 12 dvdd power 2.0 ? 3.6 v vdd 13 avdd_if power 2.0 ? 3.6 v vdd 14 rbias analog external high-precision resistor 15 avdd_rf power 2.0 ? 3.6 v vdd 16 n.c. not connected 17 pa analog single-ended tx output (requires dc path to vdd) tx and rx switch. connected internally to gnd in tx and floating (high-impedance) 18 trx_sw analog in rx. 19 lna_p analog differential rx input (requires dc path to gnd) 20 lna_n analog differential rx input (requires dc path to gnd) 21 dcpl_vco power pin for external decoupling of vco supply regulator 22 avdd_synth1 power 2.0 ? 3.6 v vdd 23 lpf0 analog external loop filter components 24 lpf1 analog external loop filter components 25 avdd_pfd_chp power 2.0 ? 3.6 v vdd 26 dcpl_pfd_chp power pin for external decoupling of pfd and chp regulator 27 avdd_synth2 power 2.0 ? 3.6 v vdd 28 avdd_xosc power 2.0 ? 3.6 v vdd 29 dcpl_xosc power pin for external decoupling of xosc supply regulator crystal oscillator pin 1 (must be grounded if a tcxo or other external clock 30 xosc_q1 analog connected to ext_xosc is used) crystal oscillator pin 2 (must be left floating if a tcxo or other external clock 31 xosc_q2 analog connected to ext_xosc is used) pin for external clock input (must be grounded if a regular crystal connected to 32 ext_xosc digital input xosc_q1 and xosc_q2 is used) ? gnd ground pad the ground pad must be connected to a solid ground plane. 6 terminal configuration and functions copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: cc1125
cc1125 www.ti.com swrs120e ? june 2011 ? revised october 2014 4 specifications all measurements performed on cc1120em_868_915 rev.1.0.1, cc1120em_955 rev.1.2.1, cc1120em_420_470 rev.1.0.1 or cc1120em_169 rev.1.2 (f xosc = 32 mhz), and cc1125em_868_915 rev.1.1.0, cc1125em_420_470 rev.1.1.0, cc1125em_169 rev.1.1.0, cc1125em-cat1-868 (f xosc = 40 mhz). 4.1 absolute maximum ratings (1) (2) parameter min max unit condition supply voltage (vdd, avdd_x) ? 0.3 3.9 v all supply pins must have the same voltage solder reflow temperature 260 c according to ipc/jedec j-std-020 input rf level +10 dbm voltage on any digital pin ? 0.3 vdd+0.3 v max 3.9 voltage on analog pins ? 0.3 2.0 v (including dcpl pins) (1) stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under general characteristics is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) all voltage values are with respect to v ss , unless otherwise noted. 4.2 handling ratings min max unit t stg storage temperature range ? 40 125 c human body model (hbm), per ansi/esda/jedec js001 (1) ? 2 2 kv electrostatic v esd discharge (esd) charged device model (cdm), per jesd22- all pins ? 500 500 v performance: c101 (2) (1) jedec document jep155 states that 500-v hbm allows safe manufacturing with a standard esd control process. (2) jedec document jep157 states that 250-v hbm allows safe manufacturing with a standard esd control process. 4.3 recommended operating conditions (general characteristics) parameter min typ max unit condition voltage supply range 2.0 3.6 v all supply pins must have the same voltage voltage on digital inputs 0 vdd v temperature range ? 40 85 c ambient 4.4 thermal resistance characteristics for rhb package c/w (1) air flow (m/s) (2) r jc junction-to-case (top) 21.1 0.00 r jb junction-to-board 5.3 0.00 r ja junction-to-free air 31.3 0.00 psi jt junction-to-package top 0.2 0.00 psi jb junction-to-board 5.3 0.00 r jc junction-to-case (bottom) 0.8 0.00 (1) these values are based on a jedec-defined 2s2p system (with the exception of the theta jc [r jc ] value, which is based on a jedec-defined 1s0p system) and will change based on environment as well as application. for more information, see these eia/jedec standards: ? jesd51-2, integrated circuits thermal test method environmental conditions - natural convection (still air) ? jesd51-3, low effective thermal conductivity test board for leaded surface mount packages ? jesd51-7, high effective thermal conductivity test board for leaded surface mount packages ? jesd51-9, test boards for area array surface mount package thermal measurements power dissipation of 40 mw and an ambient temperature of 25 o c is assumed. (2) m/s = meters per second copyright ? 2011 ? 2014, texas instruments incorporated specifications 7 submit documentation feedback product folder links: cc1125
cc1125 swrs120e ? june 2011 ? revised october 2014 www.ti.com 4.5 rf characteristics parameter min typ max unit condition 820 960 mhz 410 480 mhz (273.3) (320) mhz see swra398 for more information. frequency bands 164 192 mhz (205) (240) mhz contact ti for more information about the use of these frequency bands. (136.7) (160) mhz 30 hz in 820 ? 950 mhz band frequency resolution 15 hz in 410 ? 480 mhz band 6 hz in 164 ? 192 mhz band 0 200 kbps packet mode data rate 0 100 kbps transparent mode data rate step size 1e-4 bps 4.6 regulatory standards performance mode frequency band suitable for compliance with comments arib t-108 arib t-96 performance also suitable etsi en 300 220 category 1 for systems targeting etsi en 54-25 maximum allowed output fcc part 101 820 ? 960 mhz power in the respective fcc part 24 submask d bands, using a range fcc part 15.247 extender such as the fcc part 15.249 cc1190 device fcc part 90 mask g fcc part 90 mask j arib t-67 arib rcr std-30 performance also suitable high-performance mode etsi en 301 166 for systems targeting etsi en 300 113 maximum allowed output 410 ? 480 mhz etsi en 300 220 category 1 power in the respective fcc part 90 mask d bands, using a range fcc part 90 mask e extender fcc part 90 mask g etsi en 300 220 category 1 performance also suitable etsi en 301 166 for systems targeting etsi en 300 113 maximum allowed output 164 ? 192 mhz fcc part 90 mask c power in the respective fcc part 90 mask d bands, using a range fcc part 90 mask e extender etsi en 300 220 category 2 820 ? 960 mhz fcc part 15.247 fcc part 15.249 low-power mode 410 ? 480 mhz etsi en 300 220 category 2 164 ? 192 mhz etsi en 300 220 category 2 8 specifications copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: cc1125
cc1125 www.ti.com swrs120e ? june 2011 ? revised october 2014 4.7 current consumption, static modes t a = 25 c, vdd = 3.0 v, f xosc = 32 mhz if nothing else stated. parameter min typ max unit condition 0.12 1 a power down with retention 0.5 a low-power rc oscillator running xoff mode 170 a crystal oscillator / tcxo disabled clock running, system waiting with no idle mode 1.3 ma radio activity 4.8 current consumption, transmit modes 4.8.1 950-mhz band (high-performance mode) t a = 25 c, vdd = 3.0 v, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition tx current consumption +10 dbm 37 ma tx current consumption 0 dbm 26 ma 4.8.2 868-, 915-, and 920-mhz bands (high-performance mode) t a = 25 c, vdd = 3.0 v, f xosc = 40 mhz if nothing else stated parameter min typ max unit condition tx current consumption +14 dbm 47 ma tx current consumption +10 dbm 38 ma 4.8.3 434-mhz band (high-performance mode) t a = 25 c, vdd = 3.0 v, f xosc = 40 mhz if nothing else stated parameter min typ max unit condition tx current consumption +15 dbm 51 ma tx current consumption +14 dbm 47 ma tx current consumption +10 dbm 36 ma 4.8.4 169-mhz band (high performance mode) t a = 25 c, vdd = 3.0 v, f xosc = 40 mhz if nothing else stated parameter min typ max unit condition tx current consumption +15 dbm 56 ma tx current consumption +14 dbm 52 ma tx current consumption +10 dbm 40 ma 4.8.5 low-power mode t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition tx current consumption +10 dbm 32 ma copyright ? 2011 ? 2014, texas instruments incorporated specifications 9 submit documentation feedback product folder links: cc1125
cc1125 swrs120e ? june 2011 ? revised october 2014 www.ti.com 4.9 current consumption, receive modes 4.9.1 high-performance mode t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition rx wait for sync using rx sniff mode, where the receiver 1.2 kbps, 4-byte preamble 2 ma wakes up at regular intervals to look for an incoming packet 38.4 kbps, 4-byte preamble 13.4 ma rx peak current, f xosc = 40 mhz peak current consumption during packet 433-, 868-, 915-, and 920-mhz bands 26 ma reception at the sensitivity threshold 169-mhz band 27 ma average current consumption 50 kbps, 5-byte preamble, 40-khz rc check for data packet every 1 second using 15 a oscillator used as sleep timer wake on radio 4.9.2 low-power mode t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition rx peak current low-power rx mode peak current consumption during packet 17 ma 1.2 kbps reception at the sensitivity level 10 specifications copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: cc1125
cc1125 www.ti.com swrs120e ? june 2011 ? revised october 2014 4.10 receive parameters all rx measurements made at the antenna connector, to a bit error rate (ber) limit of 1%. 4.10.1 general receive parameters (high-performance mode) t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition saturation +10 dbm digital channel filter programmable bandwidth f xosc = 32 mhz 2.8 200 khz f xosc = 40 mhz 3.5 250 khz iip3, normal mode ? 14 dbm at maximum gain iip3, high linearity mode ? 8 dbm using 6-db gain reduction in front end with carrier sense detection enabled and 12 % assuming 4-byte preamble datarate offset tolerance 0.2 % with carrier sense detection disabled spurious emissions radiated emissions measured according to 1 ? 13 ghz (vco leakage at 3.5 ghz) ? 56 dbm etsi en 300 220, fc = 869.5 mhz 30 mhz to 1 ghz < ? 57 dbm optimum source impedance 868-, 915-, and 920-mhz bands 60 + j60 / 30 + j30 ? (differential or single-ended rx configurations) 433-mhz band 100 + j60 / 50+ j30 ? 169-mhz band 140 + j40 / 70 + j20 ? copyright ? 2011 ? 2014, texas instruments incorporated specifications 11 submit documentation feedback product folder links: cc1125
cc1125 swrs120e ? june 2011 ? revised october 2014 www.ti.com 4.10.2 rx performance in 950-mhz band (high-performance mode) t a = 25 c, vdd = 3.0 v, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition ? 120 dbm 1.2 kbps, dev=4 khz chf=10 khz (1) sensitivity 50 kbps 2gfsk, dev=25 khz, chf=100 ? 107 dbm note: sensitivity can be improved if the tx and khz rx matching networks are separated. 200 kbps, dev=83 khz (outer symbols), ? 100 dbm chf=200 khz, 4gfsk (2) 51 db 12.5 khz (adjacent channel) 52 db 25 khz (alternate channel) blocking and selectivity 1.2 kbps 2-fsk, 12.5-khz channel separation, 73 db 1 mhz 4-khz deviation, 10-khz channel filter 76 db 2 mhz 81 db 10 mhz 43 db 200 khz (adjacent channel) blocking and selectivity 51 db 400 khz (alternate channel) 50 kbps 2-gfsk, 200-khz channel separation, 25-khz deviation, 100-khz channel filter 62 db 1 mhz (same modulation format as 802.15.4g 65 db 2 mhz mandatory mode) 71 db 10 mhz 37 db 200 khz (adjacent channel) 44 db 400 khz (alternate channel) blocking and selectivity 200 kbps 4-gfsk, 83-khz deviation (outer 55 db 1 mhz symbols), 200-khz channel filter, zero if 58 db 2 mhz 64 db 10 mhz (1) dev is short for deviation, chf is short for channel filter bandwidth (2) bt=0.5 is used in all gfsk measurements 12 specifications copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: cc1125
cc1125 www.ti.com swrs120e ? june 2011 ? revised october 2014 4.10.3 rx performance in 868-, 915-, and 920-mhz bands (high-performance mode) t a = 25 c, vdd = 3.0 v, f xosc = 32 mhz if nothing else stated if nothing else stated parameter min typ max unit condition 300 bps, dev=1 khz chf=3.8 khz (1) , ? 129 dbm f xosc = 40 mhz ? 123 dbm 1.2 kbps, dev=20 khz chf=50 khz ? 114 dbm 4.8 kbps ook sensitivity ? 110 dbm 38.4 kbps, dev=20 khz chf=100 khz ? 110 dbm 50 kbps 2gfsk, dev=25 khz, chf=100 khz 200 kbps, dev=83 khz (outer symbols), ? 103 dbm chf=200 khz, 4gfsk 62 db 6.25 khz (adjacent channel) blocking and selectivity 63 db 12.5 khz (alternate channel) 0.3-kbps 2-fsk, 6.25-khz channel separation, 1-khz deviation, 3.8-khz 83 db 1 mhz channel filter 87 db 2 mhz f xosc = 40 mhz using tcxo 91 db 10 mhz 58 db + 12.5 khz (adjacent channel) blocking and selectivity 58 db 25 khz (alternate channel) 1.2-kbps 2-fsk, 12.5-khz channel separation, 4-khz deviation, 10-khz 78 db 1 mhz channel filter 82 db 2 mhz f xosc = 40 mhz using tcxo 86 db 10 mhz blocking and selectivity 58 db 25 khz (alternate channel) 1.2-kbps 2-gfsk, 25-khz channel 77 db 1 mhz separation, 4-khz deviation, 16-khz 106 db 2 mhz channel filter f xosc = 40 mhz using tcxo using external saw filter for 101 db 10 mhz compliance with etsi category 1 42 db 100 khz (adjacent channel) blocking and selectivity 43 db 200 khz (alternate channel) 38.4-kbps 2-gfsk, 100-khz channel 62 db 1 mhz separation, 20-khz deviation, 100- 66 db 2 mhz khz channel filter 74 db 10 mhz 43 db 200 khz (adjacent channel) blocking and selectivity 50-kbps 2-gfsk, 200-khz channel 50 db 400 khz (alternate channel) separation, 25-khz deviation, 100- 61 db 1 mhz khz channel filter 65 db 2 mhz (same modulation format as 802.15.4g mandatory mode) 74 db 10 mhz 36 db 200 khz (adjacent channel) blocking and selectivity 44 db 400 khz (alternate channel) 200-kbps 4-gfsk, 83-khz deviation 55 db 1 mhz (outer symbols), 200-khz channel 59 db 2 mhz filter, zero if 67 db 10 mhz image rejection 1.2 kbps, dev=4 khz chf=10 khz (1) , image at (image compensation enabled) 58 db -125 khz f xosc = 40 mhz using tcxo (1) dev is short for deviation, chf is short for channel filter bandwidth copyright ? 2011 ? 2014, texas instruments incorporated specifications 13 submit documentation feedback product folder links: cc1125
cc1125 swrs120e ? june 2011 ? revised october 2014 www.ti.com 4.10.4 rx performance in 434-mhz band (high-performance mode) t a = 25 c, vdd = 3.0 v, f xosc = 32 mhz if nothing else stated if nothing else stated parameter min typ max unit condition 300 bps, dev=1 khz, chf=3.8 khz (1) ? 129 dbm f xosc = 40 mhz ? 123 dbm 1.2 kbps, dev=4 khz chf=10 khz (1) sensitivity 50-kbps 2-gfsk, dev=25 khz, chf=100 ? 109 dbm khz (1) ? 116 dbm 1.2 kbps, dev=20 khz chf=50 khz (1) 65 db + 6.25 khz (adjacent channel) blocking and selectivity 66 db + 12.5 khz (alternate channel) 0.3-kbps 2-fsk, 6.25-khz channel separation, 1-khz deviation, 3.8-khz 86 db 1 mhz channel filter 90 db 2 mhz f xosc = 40 mhz using tcxo 95 db 10 mhz 60 db + 12.5 khz (adjacent channel) blocking and selectivity 61 db 25 khz (alternate channel) 1.2-kbps 2-fsk, 12.5-khz channel separation, 4-khz deviation, 10-khz 80 db 1 mhz channel filter 85 db 2 mhz f xosc = 40 mhz using tcxo 91 db 10 mhz 47 db + 100 khz (adjacent channel) blocking and selectivity 50 db 200 khz (alternate channel) 38.4-kbps 2-gfsk, 100-khz channel 67 db 1 mhz separation, 20-khz deviation, 100-khz 71 db 2 mhz channel filter 78 db 10 mhz (1) dev is short for deviation, chf is short for channel filter bandwidth 14 specifications copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: cc1125
cc1125 www.ti.com swrs120e ? june 2011 ? revised october 2014 4.10.5 rx performance in 169-mhz band (high-performance mode) t a = 25 c, vdd = 3.0 v, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition 300 bps, dev=1 khz, chf=3.8 khz (1) ? 129 dbm f xosc = 40 mhz sensitivity ? 123 dbm 1.2 kbps, dev=4 khz chf=10 khz (1) 67 db 6.25 khz (adjacent channel) blocking and selectivity 67 db + 12.5 khz (alternate channel) 0.3-kbps 2-fsk, 6.25-khz channel separation, 1-khz deviation, 3.8-khz 88 db 1 mhz channel filter 101 db ? 2 mhz f xosc = 40 mhz using tcxo 104 db 10 mhz 63 db 12.5 khz (adjacent channel) blocking and selectivity 65 db 25 khz (alternate channel) 1.2-kbps 2-fsk, 12.5-khz channel separation, 4-khz deviation, 10-khz 82 db 1 mhz channel filter 86 db 2 mhz f xosc = 40 mhz using tcxo 93 db ? 10 mhz spurious response rejection 1.2-kbps 2-fsk, 12.5-khz channel 70 db separation, 4-khz deviation, 10-khz channel filter image rejection 1.2 kbps, dev=4 khz chf=10 khz (1) , image at 66 db (image compensation enabled) ? 125 khz (1) dev is short for deviation, chf is short for channel filter bandwidth copyright ? 2011 ? 2014, texas instruments incorporated specifications 15 submit documentation feedback product folder links: cc1125
cc1125 swrs120e ? june 2011 ? revised october 2014 www.ti.com 4.10.6 rx performance in low-power mode t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition ? 111 dbm 1.2 kbps, dev=4 khz chf=10 khz (1) ? 99 dbm 38.4 kbps, dev=50 khz chf=100 khz (1) sensitivity 50-kbps 2-gfsk, dev=25 khz, chf=100 ? 99 dbm khz (1) 46 db 12.5 khz (adjacent channel) blocking and selectivity 46 db 25 khz (alternate channel) 1.2-kbps 2-fsk, 12.5-khz channel 73 db 1 mhz separation, 4-khz deviation, 10-khz channel 78 db 2 mhz filter 79 db 10 mhz 43 db 50 khz (adjacent channel) 45 db + 100 khz (alternate channel) blocking and selectivity 1.2-kbps 2-fsk, 50-khz channel separation, 71 db 1 mhz 20-khz deviation, 50-khz channel filter 74 db 2 mhz 75 db 10 mhz 37 db + 100 khz (adjacent channel) blocking and selectivity 43 db + 200 khz (alternate channel) 38.4-kbps 2-gfsk, 100-khz channel 58 db 1 mhz separation, 20-khz deviation, 100-khz 62 db 2 mhz channel filter 64 db + 10 mhz 43 db + 200 khz (adjacent channel) blocking and selectivity 50-kbps 2-gfsk, 200-khz channel 52 db + 400 khz (alternate channel) separation, 25-khz deviation, 100-khz 60 db 1 mhz channel filter 64 db 2 mhz (same modulation format as 802.15.4g mandatory mode) 65 db 10 mhz saturation +10 dbm (1) dev is short for deviation, chf is short for channel filter bandwidth 16 specifications copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: cc1125
cc1125 www.ti.com swrs120e ? june 2011 ? revised october 2014 4.11 transmit parameters t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition +12 dbm at 950 mhz +14 dbm at 915- and 920-mhz +15 dbm at 915- and 920-mhz with vdd = 3.6 v +15 dbm at 868 mhz max output power +16 dbm at 868 mhz with vdd = 3.6 v +15 dbm at 433 mhz +16 dbm at 433 mhz with vdd = 3.6 v +15 dbm at 169 mhz +16 dbm at 169 mhz with vdd = 3.6 v ? 11 dbm within fine step size range min output power ? 40 dbm within coarse step size range output power step size 0.4 db within fine step size range 4-gfsk 9.6 kbps in 12.5-khz channel, ? 75 dbc measured in 100-hz bandwidth at 434 mhz (fcc part 90 mask d compliant) 4-gfsk 9.6 kbps in 12.5-khz channel, adjacent channel power ? 58 dbc measured in 8.75-khz bandwidth (etsi 300 220 compliant) 2-gfsk 2.4 kbps in 12.5-khz channel, 1.2-khz ? 61 dbc deviation spurious emissions < ? 60 dbm (not including harmonics) harmonics second harm, 169 mhz ? 39 dbm third harm, 169 mhz ? 58 dbm second harm, 433 mhz ? 56 dbm transmission at +14 dbm (or maximum allowed third harm, 433 mhz ? 51 dbm in applicable band where this is less than +14 dbm) using ti reference design. second harm, 450 mhz ? 60 dbm emissions measured according to arib t-96 in third harm, 450 mhz ? 45 dbm 950-mhz band, etsi en 300-220 in 169-, 433-, and 868-mhz bands and fcc part 15.247 in second harm, 868 mhz ? 40 dbm 450- and 915-mhz band. third harm, 868 mhz ? 42 dbm fourth harmonic in 915-mhz band will require extra filtering to meet fcc requirements if second harm, 915 mhz 56 dbuv/m transmitting for long intervals ( > 50-ms periods). third harm, 915 mhz 52 dbuv/m fourth harm, 915 mhz 60 dbuv/m second harm, 950 mhz ? 58 dbm third harm, 950 mhz ? 42 dbm optimum load impedance 868-, 915-, and 920-mhz bands 35 + j35 ? 433-mhz band 55 + j25 ? 169-mhz band 80 + j0 ? copyright ? 2011 ? 2014, texas instruments incorporated specifications 17 submit documentation feedback product folder links: cc1125
cc1125 swrs120e ? june 2011 ? revised october 2014 www.ti.com 4.12 pll parameters 4.12.1 high-performance mode t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz, f xosc = 40 mhz using tcxo if nothing else stated parameter min typ max unit condition ? 100 dbc/hz 10 khz offset phase noise in 950-mhz band ? 103 dbc/hz 100 khz offset f xosc = 32 mhz ? 123 dbc/hz 1 mhz offset ? 101 dbc/hz 10 khz offset phase noise in 868-, 915-, 920-mhz bands ? 102 dbc/hz 100 khz offset ? 124 dbc/hz 1 mhz offset ? 107 dbc/hz 10 khz offset phase noise in 433-mhz band ? 110 dbc/hz 100 khz offset ? 130 dbc/hz 1 mhz offset ? 115 dbc/hz 10 khz offset phase noise in 169-mhz band ? 115 dbc/hz 100 khz offset ? 135 dbc/hz 1 mhz offset 4.12.2 low-power mode t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition ? 90 dbc/hz 10 khz offset phase noise in 950-mhz band ? 92 dbc/hz 100 khz offset ? 124 dbc/hz 1 mhz offset ? 95 dbc/hz 10 khz offset phase noise in 868-, 915- , and 920-mhz ? 95 dbc/hz 100 khz offset bands ? 124 dbc/hz 1 mhz offset ? 98 dbc/hz 10 khz offset phase noise in 433-mhz band ? 102 dbc/hz 100 khz offset ? 129 dbc/hz 1 mhz offset ? 106 dbc/hz 10 khz offset phase noise in 169-mhz band ? 110 dbc/hz 100 khz offset ? 136 dbc/hz 1 mhz offset 18 specifications copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: cc1125
cc1125 www.ti.com swrs120e ? june 2011 ? revised october 2014 4.13 wake-up and timing t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition powerdown to idle 0.4 ms depends on crystal 166 s calibration disabled idle to rx/tx 461 s calibration enabled rx/tx turnaround 50 s 296 s calibrate when leaving rx/tx enabled rx/tx to idle time 0 s calibrate when leaving rx/tx disabled frequency synthesizer calibration 391 s when using scal strobe required for rf front-end gain settling only. minimum required number of preamble bytes 0.5 bytes digital demodulation does not require preamble for settling. time from start rx until valid rssi, 4.6 ms 12.5-khz channels including gain settling (function of channel bandwidth. programmable for trade-off 0.3 ms 200-khz channels between speed and accuracy) 4.14 high-speed crystal oscillator t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition it is expected that there will be degraded sensitivity at multiples of xosc/2 in rx, and an increase in spurious emissions when the rf channel is close to multiples of xosc in tx. we crystal frequency 32 44 mhz recommend that the rf channel is kept rx_bw/2 away from xosc/2 in rx, and that the level of spurious emissions be evaluated if the rf channel is closer than 1 mhz to multiples of xosc in tx. load capacitance (c l ) 10 pf esr < 50 ? start-up time 0.4 ms depends on crystal 4.15 high-speed clock input (tcxo) t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition clock frequency 32 44 mhz tcxo with cmos output tcxo with cmos output directly coupled to pin ext_osc high input voltage 1.4 vdd v low input voltage 0 0.6 v rise / fall time 2 ns clipped sine output tcxo clipped sine output connected to pin ext_osc through series 0.8 1.5 v clock input amplitude (peak-to-peak) capacitor 4.16 32-khz clock input t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition clock frequency 32 khz 32-khz clock input pin input high voltage 0.8 vdd v 32-khz clock input pin input low voltage 0.2 vdd v copyright ? 2011 ? 2014, texas instruments incorporated specifications 19 submit documentation feedback product folder links: cc1125
cc1125 swrs120e ? june 2011 ? revised october 2014 www.ti.com 4.17 low speed rc oscillator t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition after calibration (calibrated against the high- frequency 32/40 khz speed xosc) relative to frequency reference (for example, frequency accuracy after calibration 0.1 % 32-mhz crystal or tcxo) initial calibration time 1.6 ms 4.18 i/o and reset t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition logic input high voltage 0.8 vdd v logic input low voltage 0.2 vdd v logic output high voltage 0.8 vdd v at 4-ma output load or less logic output low voltage 0.2 vdd v power-on reset threshold 1.3 v voltage on dvdd pin 4.19 temperature sensor t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition temperature sensor range ? 40 85 c change in sensor output voltage versus temperature coefficient 2.66 mv / c change in temperature typical sensor output voltage at t a = 25 c, typical output voltage 794 mv vdd = 3.0 v change in sensor output voltage versus vdd coefficient 1.17 mv / v change in vdd the cc1125 device can be configured to provide a voltage proportional to temperature on gpio1. the temperature can be estimated by measuring this voltage (see section 4.19 , temperature sensor ). for more information, see the temperature sensor design note ( swra415 ). 20 specifications copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: cc1125
cc1125 www.ti.com swrs120e ? june 2011 ? revised october 2014 4.20 typical characteristics t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated. all measurements performed on cc1120em_868_915 rev.1.0.1, cc1120em_955 rev.1.2.1, cc1120em_420_470 rev.1.0.1 or cc1120em_169 rev.1.2 (f xosc = 32 mhz), and cc1125em_868_915 rev.1.1.0, cc1125em_420_470 rev.1.1.0, cc1125em_169 rev.1.1.0, cc1125em-cat1-868 (f xosc = 40 mhz). figure 4-16 was measured at the 50- ? antenna connector. 1.2 kbps, 4-khz deviation, 10-khz channel filter bandwidth 1.2 kbps, 4-khz deviation, 10-khz channel filter bandwidth figure 4-1. sensitivity vs temperature figure 4-2. sensitivity vs voltage 1.2 kbps, 4-khz deviation, 10-khz channel filter bandwidth 1.2 kbps, 4-khz deviation, 10-khz channel filter bandwidth figure 4-3. sync word sensitivity vs sync word detect threshold figure 4-4. rx current vs input level 1.2 kbps, 4-khz deviation, 16-khz channel filter bandwidth, wanted 1.2 kbps, 4-khz deviation, 16-khz channel filter bandwidth, wanted channel at 869.3 mhz ( ? 104 dbm) channel at 869.3 mhz ( ? 104 dbm) figure 4-5. selectivity vs offset frequency (25-khz channel figure 4-6. selectivity vs offset frequency (25-khz channel spacing) spacing) copyright ? 2011 ? 2014, texas instruments incorporated specifications 21 submit documentation feedback product folder links: cc1125 -130 -128 -126 -124 -122 -120 -118 -116 -114 3 5 7 9 11 13 15 17 sync word detect threshold sensitivity (dbm) -125 -124 -123 -122 -121 -120 -40 0 40 80 temperature (oc) sensitivity (dbm) -124 -123 -122 -121 -120 2 2.5 3 3.5 supply voltage (v) sensitivity (dbm) 0 10 20 30 40 50 60 70 80 90 860 862 864 866 868 870 872 874 876 878 frequency (mhz) selectivity (db) 0 10 20 30 40 50 60 70 80 90 868.6 868.8 869 869.2 869.4 869.6 869.8 870 frequency (mhz) selectivity (db) 20.8 21.2 21.6 22 22.4 22.8 23.2 -130 -80 -30 20 input level (dbm) rx current (ma)
cc1125 swrs120e ? june 2011 ? revised october 2014 www.ti.com typical characteristics (continued) figure 4-7. rssi vs input level figure 4-8. automatic image cancellation figure 4-9. output power vs voltage max setting, 170 mhz figure 4-10. output power at 868 mhz vs pa power setting figure 4-11. tx current at 868 mhz figure 4-12. output power vs temperature vs pa power setting max setting, 170 mhz, 3.6 v 22 specifications copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: cc1125 15 15.5 16 16.5 17 -40 0 40 80 temperature (oc) output power (dbm) 0 10 20 30 40 50 60 7f 7b 77 73 6f 6b 67 63 5f 5b 57 53 4f 4b 47 43 pa power setting tx current (ma) -50 -40 -30 -20 -10 0 10 20 7f 7b 77 73 6f 6b 67 63 5f 5b 57 53 4f 4b 47 43 pa power setting output power (dbm) 6 8 10 12 14 16 18 2 2.5 3 3.5 supply voltage (v) output power (dbm) 0 10 20 30 40 50 60 70 869.05 869.1 869.15 869.2 869.25 869.3 869.35 frequency (mhz) selectivity (db) iqic enabled iqic disabled -40 -20 0 20 40 60 80 100 -150 -100 -50 0 input level (dbm) rssi
cc1125 www.ti.com swrs120e ? june 2011 ? revised october 2014 typical characteristics (continued) 1.2 kbps 2-fsk, dev = 4 khz 200 kbps, dev = 83 khz (outer symbols), 4gfsk figure 4-14. eye diagram figure 4-13. eye diagram 9.6 kbps in 12.5 khz channel figure 4-15. fcc part 90 mask d figure 4-16. output power vs load impedance (+14-dbm setting) figure 4-18. gpio output low voltage vs current being sinked figure 4-17. gpio output high voltage vs current being sourced copyright ? 2011 ? 2014, texas instruments incorporated specifications 23 submit documentation feedback product folder links: cc1125 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 0 5 10 15 20 25 30 35 current (ma) gpio output high voltage (v) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 35 current (ma) gpio output low voltage (mv)
cc1125 swrs120e ? june 2011 ? revised october 2014 www.ti.com 5 detailed description 5.1 block diagram figure 5-1 shows the system block diagram of the cc1125 device. figure 5-1. system block diagram 5.2 frequency synthesizer at the center of the cc1125 device there is a fully integrated, fractional-n, ultra-high-performance frequency synthesizer. the frequency synthesizer is designed for excellent phase noise performance, providing very high selectivity and blocking performance. the system is designed to comply with the most stringent regulatory spectral masks at maximum transmit power. either a crystal can be connected to xosc_q1 and xosc_q2, or a tcxo can be connected to the ext_xosc input. the oscillator generates the reference frequency for the synthesizer, as well as clocks for the analog-to-digital converter (adc) and the digital part. to reduce system cost, cc1125 device has high-accuracy frequency estimation and compensation registers to measure and compensate for crystal inaccuracies. this compensation enables the use of lower cost crystals. if a tcxo is used, the cc1125 device automatically turns on and off the tcxo when needed to support low-power modes and wake-on- radio operation. 24 detailed description copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: cc1125 cc112x marc main radio control unit ultra low power 16 bit mcu 256 byte fifo ram buffer 4k byte rom rf and dsp frontend packet handler and fifo control configuration and status registers ewor enhanced ultra low power wake on radio timer spi serial configuration and data interface interrupt and io handler system bus pa lna_p lna_n 90db dynamic range adc 90db dynamic range adc high linearity lna 14dbm high efficiency pa channel filter xosc cordic agc automatic gain control, 60db vga range rssi measurements and carrier sense detection highly flexible fsk / ook demodulator (optional bit clock) (optional low jitter serial data output for legacy protocols) data interface with signal chain access xosc_q1 xosc_q2 ultra low power 32khz auto-calibrated rc oscillator (optional 32khz clock intput) csn (chip select) si (serial input) so (serial output) sclk (serial clock) (optional gpio0-3) modulator fully integrated fractional-n frequency synthesizer output power ramping and ook / ask modulation ifamp ifamp (optional autodetected external xosc / tcxo) (optional gpio for antenna diversity) i q battery sensor / temp sensor power on reset
cc1125 www.ti.com swrs120e ? june 2011 ? revised october 2014 5.3 receiver the cc1125 device features a highly flexible receiver. the received rf signal is amplified by the low- noise amplifier (lna) and is down-converted in quadrature (i/q) to the intermediate frequency (if). at if, the i/q signals are digitized by the high dynamic-range adcs. an advanced automatic gain control (agc) unit adjusts the front-end gain, and enables the cc1125 device to receive strong and weak signals, even in the presence of strong interferers. high-attenuation channels and data filtering enable reception with strong neighbor channel interferers. the i/q signal is converted to a phase and magnitude signal to support the fsk and ook modulation schemes. note a unique i/q compensation algorithm removes any problem of i/q mismatch, thus avoiding time-consuming and costly i/q image calibration steps. 5.4 transmitter the cc1125 transmitter is based on direct synthesis of the rf frequency (in-loop modulation). to use the spectrum effectively, the cc1125 device has extensive data filtering and shaping in tx mode to support high throughput data communication in narrowband channels. the modulator also controls power ramping to remove issues such as spectral splattering when driving external high-power rf amplifiers. 5.5 radio control and user interface the cc1125 digital control system is built around the main radio control (marc), which is implemented using an internal high-performance, 16-bit ultra-low-power processor. marc handles power modes, radio sequencing, and protocol timing. a 4-wire spi serial interface is used for configuration and data buffer access. the digital baseband includes support for channel configuration, packet handling, and data buffering. the host mcu can stay in power-down mode until a valid rf packet is received. this greatly reduces power consumption. when the host mcu receives a valid rf packet, it burst-reads the data. this reduces the required computing power. the cc1125 radio control and user interface are based on the widely used cc1101 transceiver. this relationship enables an easy transition between the two platforms. the command strobes and the main radio states are the same for the two platforms. for legacy formats, the cc1125 device also supports two serial modes. ? synchronous serial mode: the cc1125 device performs bit synchronization and provides the mcu with a bit clock with associated data. ? transparent mode: the cc1125 device outputs the digital baseband signal using a digital interpolation filter to eliminate jitter introduced by digital filtering and demodulation. 5.6 4.5 enhanced wake-on-radio (ewor) ewor, using a flexible integrated sleep timer, enables automatic receiver polling with no intervention from the mcu. when the cc1125 device enters rx mode, it listens and then returns to sleep if a valid rf packet is not received. the sleep interval and duty cycle can be configured to make a trade-off between network latency and power consumption. incoming messages are time-stamped to simplify timer re- synchronization. the ewor timer runs off an ultra-low-power 32-khz rc oscillator. to improve timing accuracy, the rc oscillator can be automatically calibrated to the rf crystal in configurable intervals. copyright ? 2011 ? 2014, texas instruments incorporated detailed description 25 submit documentation feedback product folder links: cc1125
cc1125 swrs120e ? june 2011 ? revised october 2014 www.ti.com 5.7 sniff mode the cc1125 device supports quick start up times, and requires few preamble bits. sniff mode uses these conditions to dramatically reduce the current consumption while the receiver is waiting for data. because the cc1125 device can wake up and settle much faster than the duration of most preambles, it is not required to be in rx mode continuously while waiting for a packet to arrive. instead, the enhanced wake-on-radio feature can be used to put the device into sleep mode periodically. by setting an appropriate sleep time, the cc1125 device can wake up and receive the packet when it arrives with no performance loss. this sequence removes the need for accurate timing synchronization between transmitter and receiver, and lets the user trade off current consumption between the transmitter and receiver. for more information, see the sniff mode design note ( swra428 ). 5.8 antenna diversity antenna diversity can increase performance in a multipath environment. an external antenna switch is required. the cc1201 device uses one of the gpio pins to automatically control the switch. this device also supports differential output control signals typically used in rf switches. if antenna diversity is enabled, the gpio alternates between high and low states until a valid rf input signal is detected. an optional acknowledge packet can be transmitted without changing the state of the gpio. an incoming rf signal can be validated by received signal strength or by using the automatic preamble detector. using the automatic preamble detector ensures a more robust system and avoids the need to set a defined signal strength threshold (such a threshold sets the sensitivity limit of the system). 26 detailed description copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: cc1125
cc1125 www.ti.com swrs120e ? june 2011 ? revised october 2014 5.9 wavematch advanced capture logic locks onto the synchronization word and does not require preamble settling bytes. therefore, receiver settling time is reduced to the settling time of the agc, typically 4 bits. the wavematch feature also greatly reduces false sync triggering on noise, further reducing the power consumption and improving sensitivity and reliability. the same logic can also be used as a high- performance preamble detector to reliably detect a valid preamble in the channel. see swrc046 for more information. figure 5-2. receiver configurator in smartrf ? studio copyright ? 2011 ? 2014, texas instruments incorporated detailed description 27 submit documentation feedback product folder links: cc1125
cc1125 swrs120e ? june 2011 ? revised october 2014 www.ti.com 6 typical application circuit note this section is intended only as an introduction. very few external components are required for the operation of the cc1125 device. figure 6-1 shows a typical application circuit. the board layout will greatly influence the rf performance of the cc1125 device. figure 6-1 does not show decoupling capacitors for power pins. figure 6-1. typical application circuit for more information, see the reference designs available for the cc1125 device in section 7.2 , documentation support . 28 typical application circuit copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: cc1125 vdd ext_vdd in out tps799xx optional voltage regulator for supply noise isolation (optional control pin from cc1125) avdd_pfd_chp xosc_q2xosc_q1 dcpl_pfd_chp avdd_synth2 dcpl_xosc avdd_xosc ext_xosc reset_ngpio3 gpio2 dvdd vdd_guarddcpl si sclk csn so (gpio1) dvdd rbias avdd_if avdd_rf n.c. gpio0 lna_p lna_n dcpl_vco avdd_synth1 pa trx_sw lpf0 lpf1 vdd vdd vdd vdd vdd cc1125 5 4 3 2 16 7 8 13 12 11 10 9 1415 16 20 21 22 23 2419 18 17 28 29 30 31 32 2726 25 vdd 40 mhz crystal optional xosc/ tcxo mcu connectionspi interface and optional gpio pins vdd vdd vdd vdd
cc1125 www.ti.com swrs120e ? june 2011 ? revised october 2014 7 device and documentation support 7.1 device support 7.1.1 development support 7.1.1.1 configuration software the cc1125 device can be configured using the smartrf studio software ( swrc046 ). the smartrf studio software is highly recommended for obtaining optimum register settings, and for evaluating performance and functionality. 7.1.2 device and development-support tool nomenclature to designate the stages in the product development cycle, ti assigns prefixes to the part numbers of all microprocessors (mpus) and support tools. each device has one of three prefixes: x, p, or null (no prefix) (for example, cc1125). texas instruments recommends two of three possible prefix designators for its support tools: tmdx and tmds. these prefixes represent evolutionary stages of product development from engineering prototypes (tmdx) through fully qualified production devices and tools (tmds). device development evolutionary flow: x experimental device that is not necessarily representative of the final device's electrical specifications and may not use production assembly flow. p prototype device that is not necessarily the final silicon die and may not necessarily meet final electrical specifications. null production version of the silicon die that is fully qualified. support tool development evolutionary flow: tmdx development-support product that has not yet completed texas instruments internal qualification testing. tmds fully qualified development-support product. x and p devices and tmdx development-support tools are shipped against the following disclaimer: "developmental product is intended for internal evaluation purposes." production devices and tmds development-support tools have been characterized fully, and the quality and reliability of the device have been demonstrated fully. ti's standard warranty applies. predictions show that prototype devices (x or p) have a greater failure rate than the standard production devices. texas instruments recommends that these devices not be used in any production system because their expected end-use failure rate still is undefined. only qualified production devices are to be used. ti device nomenclature also includes a suffix with the device family name. this suffix indicates the package type (for example, rhb), the temperature range (for example, blank is the default commercial temperature range), and the device speed range, in megahertz. provides a legend for reading the complete device name for any cc1125 device. for orderable part numbers of cc1125 devices in the qfn package types, see the package option addendum of this document, the ti website (www.ti.com), or contact your ti sales representative. copyright ? 2011 ? 2014, texas instruments incorporated device and documentation support 29 submit documentation feedback product folder links: cc1125
cc1125 swrs120e ? june 2011 ? revised october 2014 www.ti.com 7.2 documentation support the following documents supplement the cc1125 processor. copies of these documents are available on the internet at www.ti.com . tip: enter the literature number in the search box provided at www.ti.com. swrr106 cc112x ipc 868- and 915-mhz 2-layer reference design swrr107 cc112x ipc 868- and 915-mhz 4-layer reference design swrr100 cc1125em 169-mhz reference design swrr101 cc1125em 420- to 470-mhz reference design swrr102 cc1121em 868- to 915-mhz reference design swrr097 cc1120em cat1 868-mhz reference design swrc046 smartrf studio software swra428 cc112x/cc120x sniff mode application note 7.3 community resources the following links connect to ti community resources. linked contents are provided "as is" by the respective contributors. they do not constitute ti specifications and do not necessarily reflect ti's views; see ti's terms of use . ti e2e ? online community ti's engineer-to-engineer (e2e) community. created to foster collaboration among engineers. at e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. ti embedded processors wiki texas instruments embedded processors wiki. established to help developers get started with embedded processors from texas instruments and to foster innovation and growth of general knowledge about the hardware and software surrounding these devices. 7.4 trademarks smartrf, e2e are trademarks of texas instruments. 7.5 electrostatic discharge caution this integrated circuit can be damaged by esd. texas instruments recommends that all integrated circuits be handled with appropriate precautions. failure to observe proper handling and installation procedures can cause damage. esd damage can range from subtle performance degradation to complete device failure. precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 7.6 glossary slyz022 ? ti glossary . this glossary lists and explains terms, acronyms, and definitions. 30 device and documentation support copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: cc1125
cc1125 www.ti.com swrs120e ? june 2011 ? revised october 2014 8 mechanical packaging and orderable information the following pages include mechanical packaging and orderable information. this information is the most current data available for the designated devices. this data is subject to change without notice and revision of this document. for browser-based versions of this data sheet, refer to the left-hand navigation. copyright ? 2011 ? 2014, texas instruments incorporated mechanical packaging and orderable information 31 submit documentation feedback product folder links: cc1125
package option addendum www.ti.com 2-nov-2014 addendum-page 1 packaging information orderable device status (1) package type package drawing pins package qty eco plan (2) lead/ball finish (6) msl peak temp (3) op temp (c) device marking (4/5) samples CC1125RHBR active vqfn rhb 32 3000 green (rohs & no sb/br) cu nipdau level-3-260c-168 hr -40 to 85 cc1125 cc1125rhbt active vqfn rhb 32 250 green (rohs & no sb/br) cu nipdau level-3-260c-168 hr -40 to 85 cc1125 cc1125rhmr obsolete vqfn rhm 32 tbd call ti call ti -40 to 85 cc1125 cc1125rhmt obsolete vqfn rhm 32 tbd call ti call ti -40 to 85 cc1125 (1) the marketing status values are defined as follows: active: product device recommended for new designs. lifebuy: ti has announced that the device will be discontinued, and a lifetime-buy period is in effect. nrnd: not recommended for new designs. device is in production to support existing customers, but ti does not recommend using this part in a new design. preview: device has been announced but is not in production. samples may or may not be available. obsolete: ti has discontinued the production of the device. (2) eco plan - the planned eco-friendly classification: pb-free (rohs), pb-free (rohs exempt), or green (rohs & no sb/br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. tbd: the pb-free/green conversion plan has not been defined. pb-free (rohs): ti's terms "lead-free" or "pb-free" mean semiconductor products that are compatible with the current rohs requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. where designed to be soldered at high temperatures, ti pb-free products are suitable for use in specified lead-free processes. pb-free (rohs exempt): this component has a rohs exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. the component is otherwise considered pb-free (rohs compatible) as defined above. green (rohs & no sb/br): ti defines "green" to mean pb-free (rohs compatible), and free of bromine (br) and antimony (sb) based flame retardants (br or sb do not exceed 0.1% by weight in homogeneous material) (3) msl, peak temp. - the moisture sensitivity level rating according to the jedec industry standard classifications, and peak solder temperature. (4) there may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) multiple device markings will be inside parentheses. only one device marking contained in parentheses and separated by a "~" will appear on a device. if a line is indented then it is a continuation of the previous line and the two combined represent the entire device marking for that device. (6) lead/ball finish - orderable devices may have multiple material finish options. finish options are separated by a vertical ruled line. lead/ball finish values may wrap to two lines if the finish value exceeds the maximum column width. important information and disclaimer: the information provided on this page represents ti's knowledge and belief as of the date that it is provided. ti bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. efforts are underway to better integrate information from third parties. ti has taken and
package option addendum www.ti.com 2-nov-2014 addendum-page 2 continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. ti and ti suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall ti's liability arising out of such information exceed the total purchase price of the ti part(s) at issue in this document sold by ti to customer on an annual basis.
tape and reel information *all dimensions are nominal device package type package drawing pins spq reel diameter (mm) reel width w1 (mm) a0 (mm) b0 (mm) k0 (mm) p1 (mm) w (mm) pin1 quadrant CC1125RHBR vqfn rhb 32 3000 330.0 12.4 5.3 5.3 1.5 8.0 12.0 q2 cc1125rhbt vqfn rhb 32 250 180.0 12.4 5.3 5.3 1.5 8.0 12.0 q2 package materials information www.ti.com 29-sep-2014 pack materials-page 1
*all dimensions are nominal device package type package drawing pins spq length (mm) width (mm) height (mm) CC1125RHBR vqfn rhb 32 3000 338.1 338.1 20.6 cc1125rhbt vqfn rhb 32 250 210.0 185.0 35.0 package materials information www.ti.com 29-sep-2014 pack materials-page 2

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